********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*17-Sep-2018
*ECN S18-0955, Rev. A
*File Name: SiHH120N60E_PS.txt and SiHH120N60E_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiHH120N60E D G S 
M1 3 GX S S NMOS W= 1530000u L= 2u 
M2 S GX S D PMOS W= 1530000u L= 0.14u 
M2B S GX S 3 PMOS2 W= 1530000u L= 1.60u 
R1 4 3 1.030e-02 TC=3.891e-03,-1.238e-05
J1 D S 4 JD 1530000u 
.MODEL JD NJF (VTO = -1.470e+01 BETA = 2.155e-01 LAMBDA = 1.000e-04 
+BETATCE = -1.023e+00 VTOTC = -0.0617 IS = 1e-18 N = 10 )
CGS GX S 6.107e-10 
CGD GX D 3.837e-12 
RG G GY 0.63 
RTCV 100 S 1e6 TC=9.533e-03,0
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 1530000u 
***************************************************************  
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 10e-8 
+ RS = 0 KP = 1.253e-05 NSUB = 8.505e+16 
+ KAPPA = 7.000e-01 NFS = 1.000e+11 
+ LD = 0 IS = 0 TPG = 1    )
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 10e-8 
+NSUB = 8.594e+14 IS = 0 TPG = -1    )
.MODEL PMOS2 PMOS ( LEVEL = 3 TOX = 10e-8 
+NSUB = 3e13 IS = 0 TPG = -1    )
***************************************************************  
.MODEL DBD D ( 
+FC = 0.1 TT = 8.000e-07 T_measured = 25 BV = 601
+RS = 1.442e-02 N = 1.306e+00 IS = 3.630e-10 
+EG = 1.207e+00 XTI = 5.646e-01 TRS1 = 3.400e-03
+CJO = 8.841e-09 VJ = 7.869e-01 M = 1.000e+00 ) 
.ENDS 
