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* Copyright:                   *
* Vishay Intertechnology, Inc. *
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*Oct 30, 2017
*ECN S17-1645, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiS903DN D G S 
M1 3 GX S S PMOS W= 2760000u L= 0.30u 
M2 S GX S D NMOS W= 2760000u L= 0.34u 
R1 D 3 9.926e-03 2.703e-03 2.965e-06 
CGS GX S 1.408e-09 
CGD GX D 8.088e-11 
RG G GY 11.1 
RTCV 100 S 1e6 1.551e-03 -5.251e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 2760000u 
*************************************************  
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 0 KP = 5.760e-06 NSUB = 8.958e+14 
+ KAPPA = 1.033e-04 NFS = 8.000e+11 
+ LD = 0 IS = 0 TPG = -1 CAPOP = 12 ) 
************************************************* 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 4.944e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
************************************************* 
.MODEL DBD D ( 
+FC = 0.1 TT = 7.606e-09 TREF = 25 BV = 20.6 
+RS = 4.372e-02 N = 1.449e+00 IS = 3.724e-08 
+EG = 5.779e-01 XTI = 1.000e+01 TRS = 1.000e-05 
+CJO = 2.000e-11 VJ = 3.843e-01 M = 2.795e-01 ) 
.ENDS 
