********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*May 22, 2017
*ECN S17-0803, Rev. A
*File Name: Si8481DB_PS.txt and Si8481DB_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si8481DB D G S 
M1 3 GX S S PMOS W= 3210000u L= 0.30u 
M2 S GX S D NMOS W= 3210000u L= 0.28u 
R1 D 3 1.001e-02 TC=2.260e-03,5.035e-07
CGS GX S 1.478e-09 
CGD GX D 8.836e-11 
RG G GY 1m 
RTCV 100 S 1e6 TC=-0.117e-04,-1.039e-06
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 3210000u 
*************************************************  
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 0 KP = 5.406e-06 NSUB = 1.000e+13 
+ KAPPA = 3.632e-06 NFS = 1.044e+09 
+ LD = 0 IS = 0 TPG = -1    )
************************************************* 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 4.562e+16 IS = 0 TPG = -1    )
************************************************* 
.MODEL DBD D ( 
+FC = 0.1 TT = 5e-8 T_measured = 25 BV = 21
+RS = 8.567e-02 N = 1.227e+00 IS = 1.008e-08 
+EG = 1.050e+00 XTI = -7.381e+00 TRS1 = 1.000e-05
+CJO = 6.620e-11 VJ = 3.000e-01 M = 3.718e-01 ) 
.ENDS 
