********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
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*Dec 25, 2017
*ECN S17-1902, Rev. A
*File Name: Si3473DDV_PS.txt and Si3473DDV_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si3473DDV  D G S 
M1 3 GX S S PMOS W= 2172500u L= 0.30u 
M2 S GX S D NMOS W= 2172500u L= 5.007e-07 
R1 D 3 1.060e-02 TC=2.606e-03,2.292e-06
CGS GX S 8.645e-10 
CGD GX D 1.000e-13 
RG G GY 4.1 
RTCV 100 S 1e6 TC=2.465e-03,-5.511e-06
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 2172500u 
***************************************************  
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 0 KP = 9.855e-06 NSUB = 1.998e+14 
+ KAPPA = 1.320e-05 NFS = 1.047e+11 
+ LD = 0 IS = 0 TPG = -1    )
*************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 1.628e+17 IS = 0 TPG = -1    )
***************************************************  
.MODEL DBD D ( 
+FC = 0.1 TT = 5.833e-08 T_measured = 25 BV = 12.5
+RS = 4.743e-02 N = 1.268e+00 IS = 3.314e-08 
+EG = 1.101e+00 XTI = -9.938e+00 TRS1 = 1.000e-05
+CJO = 2.000e-11 VJ = 3.000e-01 M = 2.694e-01 ) 
.ENDS 
