********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Mar 19, 2018
*ECN S18-0326, Rev. A
*File Name: SiS106DN_PS.txt and SiS106DN_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
*gp mln3 SiS106DN 
.SUBCKT SiS106DN D G S 
M1 3 GX S S NMOS W= 1337500u L= 0.30u 
M2 S GX S D PMOS W= 1337500u L= 0.27u 
R1 D 3 9.960e-03 TC=5.243e-03,1.090e-05
CGS GX S 4.002e-10 
CGD GX D 1.008e-13 
RG G GY 1.3 
RTCV 100 S 1e6 TC=4.174e-03,-0.166e-04
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 1337500u 
************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 7e-8 
+ RS = 0 KP = 7.365e-06 NSUB = 1.107e+17 
+ KAPPA = 1.044e-02 NFS = 1.045e+11 
+ LD = 0 IS = 0 TPG = 1    )
************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 7e-8 
+NSUB = 5.383e+15 IS = 0 TPG = -1    )
************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-07 T_measured = 25 BV = 61
+RS = 8.242e-03 N = 9.890e-01 IS = 1.000e-13 
+EG = 8.386e-01 XTI = 9.930e+00 TRS1 = 1.000e-05
+CJO = 4.193e-10 VJ = 1.090e+01 M = 9.990e-01 ) 
.ENDS 
