********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Oct 03,2016
*ECN S16-1908, Rev. A
*File Name: Si5922DU_PS.txt and Si5922DU_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si5922DU D G S 
M1 3 GX S S NMOS W= 1590000u L= 0.30u 
M2 S GX S D PMOS W= 1590000u L= 0.11u 
R1 D 3 1.441e-02 TC=3.447e-03,4.132e-06
CGS GX S 5.256e-10 
CGD GX D 1.008e-13 
RG G GY 1m 
RTCV 100 S 1e6 TC=1.658e-03,-9.255e-06
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 1590000u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 1.388e-05 NSUB = 7.308e+16 
+ KAPPA = 2.122e-03 NFS = 1.420e+11 
+ LD = 0 IS = 0 TPG = 1    )
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.339e+16 IS = 0 TPG = -1    )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.451e-08 T_measured = 25 BV = 31
+RS = 2.129e-02 N = 1.148e+00 IS = 3.603e-11 
+EG = 1.115e+00 XTI = 1.942e+00 TRS1 = 3.418e-03
+CJO = 5.098e-10 VJ = 5.430e+00 M = 9.990e-01 ) 
.ENDS 
