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* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*09-Jul-2018
*ECN S18-0692, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SQJ481EP D G S 
M1 3 GX S S PMOS W= 2539377u L= 0.30u 
M2 S GX S D NMOS W= 2539377u L= 0.62u 
R1 D 3 6.074e-02 5.873e-03 1.066e-05 
CGS GX S 9.709e-10 
CGD GX D 1.426e-11 
RG G GY 2.1 
RTCV 100 S 1e6 2.896e-03 -2.913e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 2539377u 
*************************************************  
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 2.791e-06 NSUB = 2.957e+16 
+ KAPPA = 1.106e-03 NFS = 1.216e+11 
+ LD = 0 IS = 0 TPG = -1 CAPOP = 12 ) 
************************************************* 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 8.070e+15 IS = 0 TPG = -1 CAPOP = 12 ) 
************************************************* 
.MODEL DBD D ( 
+FC = 0.1 TT = 9.106e-08 TREF = 25 BV = 81 
+RS = 1.193e-02 N = 9.736e-01 IS = 1.000e-13 
+EG = 1.178e+00 XTI = 6.304e-02 TRS = 7.003e-04 
+CJO = 1.508e-10 VJ = 6.880e-01 M = 5.518e-01 ) 
.ENDS 
