********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*09-Jul-2018
*ECN S18-0689, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si8823EDB D G S 
x1  D G S Si8823EDB_mos
x2  G S   Si8823EDB_esd
.ENDS Si8823EDB
.SUBCKT Si8823EDB_mos D G S 
M1 3 GX S S PMOS W= 597500u L= 0.30u 
M2 S GX S D NMOS W= 597500u L= 0.39u 
R1 D 3 5.288e-02 9.510e-04 -1.371e-06 
CGS GX S 3.482e-10 
CGD GX D 1.763e-11 
RG G GY 20
RTCV 100 S 1e6 1.468e-03 -6.075e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 597500u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 0 KP = 6.298e-06 NSUB = 1.404e+15 
+ KAPPA = 2.272e-04 NFS = 9.99e+11 
+ LD = 0 IS = 0 TPG = -1 CAPOP = 12 ) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 5.286e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-07 TREF = 25 BV = 21 
+RS = 3.931e-02 N = 1.451e+00 IS = 4.331e-08 
+EG = 5.392e-01 XTI = 9.948e+00 TRS = 1.000e-05 
+CJO = 5.482e-11 VJ = 3.000e-01 M = 3.207e-01 ) 
.ENDS Si8823EDB_mos
.subckt Si8823EDB_esd 2 1
r1 1 9 2.995e+05 -4e-3 
d1 9 2 dleak 
.MODEL dleak d (IS = 2.309e-10 XTI = 6.000e+02 EG = 1.17 
+ TREF = 25 TCV = 0 N = 4.095e+01 BV = 50) 
r2 1 10 1.000e-03 7.000e-03 
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 1.000e-09 XTI = -1.999e+02 EG = 1.17 
+ TREF = 25 TCV = 3.413e-03 N = 3.200e+00 BV = 1.290e+01 
+ TLEV = 1) 
.ends Si8823EDB_esd