*Jul 22, 2013
*ECN S13-1605, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si8805EDB D G S 
x1  D G S Si8805EDB_mos
x2  G S   Si8805EDB_esd
.ENDS Si8805EDB
.SUBCKT Si8805EDB_mos D G S 
M1 3 GX S S PMOS W= 358518u L= 0.25u 
M2 S GX S D NMOS W= 358518u L= 0.70u 
R1 D 3 3.42e-02 8.5196e-04 4.390e-07 
CGS GX S 1.01238e-12
CGD GX D 1.215e-12 
RG G GY 10 
RTCV 100 S 1e6 -9.550e-06 -2.068e-07 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 358518u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.3e-8 
+ RS = 0 KP = 1.148e-05 NSUB = 3.74e+13 
+ KAPPA = 2.058e-06 NFS = 1.000e+12 THETA = 0.08
+ LD = 0 IS = 0 TPG = -1 ) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.3e-8 
+NSUB = 3.2227e+17 IS = 0 TPG = -1  ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.167e-08 TREF = 25 BV = 8.2 
+RS = 1.4746e-02 N = 1.692e+00 IS = 1.000e-06 
+EG = 1.108e+00 XTI = -8.31710e+00 TRS = 1.000e-05
+CJO = 8.288e-11 VJ = 2.064e+00 M = 1.000e-00 ) 
.ENDS Si8805EDB_mos
.subckt Si8805EDB_esd 1 2 
.subckt esd 1 2 
r1 1 9 2.018e+05 TC= -4.937e-03 
d1 2 9 dleak 
.MODEL dleak d (IS = 5.618e-10 XTI = 3.866e+02 EG = 1.17 
+ TREF = 25 TCV = 0 N = 3.393e+01 BV = 50) 
r2 1 10 6.494e+01 TC= -1.621e-03 
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 1.000e-14 XTI = -7.571e+01 EG = 1.17 
+ TREF = 25 TCV = 1.423e-02 N = 1.409e+00 BV = 1.123e+01 ) 
.ends Si8805EDB_esd 
