********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Jan 23, 2017
*ECN S17-0119, Rev. B
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SQJ858AEP D G S 
M1 3 GX S S NMOS W= 5034541u L= 0.25u 
M2 S GX S D PMOS W= 5034541u L= 2.045e-07 
R1 D 3 4.292e-03 5.613e-03 1.393e-05 
CGS GX S 1.106e-09 
CGD GX D 3.781e-11 
RG G GY 1m 
RTCV 100 S 1e6 6.815e-05 6.360e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 5034541u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 1.493e-05 NSUB = 1.458e+17 
+ KAPPA = 4.329e-01 NFS = 5.304e+11 
+ LD = 0 IS = 0 TPG = 1 CAPOP = 12 ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.217e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.000e-08 TREF = 25 BV = 41 
+RS = 8.194e-03 N = 1.039e+00 IS = 9.465e-13 
+EG = 1.130e+00 XTI = 1.479e+00 TRS = 2.858e-03 
+CJO = 2.223e-10 VJ = 6.943e-01 M = 5.249e-01 ) 
.ENDS 
