********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
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*Nov 07, 2016
*ECN S16-2187, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si7615CDN D G S 
M1 3 GX S S PMOS W= 4217500u L= 0.30u 
M2 S GX S D NMOS W= 4217500u L= 0.40u 
R1 D 3 3.733e-03 2.934e-03 2.767e-06 
CGS GX S 1.529e-09 
CGD GX D 1.306e-10 
RG G GY 1m 
RTCV 100 S 1e6 1.206e-03 -2.901e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 4217500u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 0 KP = 6.361e-06 NSUB = 1.924e+14 
+ KAPPA = 1.000e-06 NFS = 1.439e+11 
+ LD = 0 IS = 0 TPG = -1 CAPOP = 12 ) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 3.686e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 3.558e-08 TREF = 25 BV = 21 
+RS = 4.168e-02 N = 1.335e+00 IS = 2.204e-08 
+EG = 1.031e+00 XTI = -5.591e+00 TRS = 1.000e-05 
+CJO = 2.000e-11 VJ = 3.000e-01 M = 2.641e-01 ) 
.ENDS 
