*Sep 16, 2013
*ECN S13-1988, Rev. A
*File Name: Si1489EDH_PS.txt, Si1489EDH_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si1489EDH D G S 
x1  D G S Si1489EDH_mos
x2  G S   Si1489EDH_esd
.ENDS  Si1489EDH
.SUBCKT Si1489EDH_mos D G S 
M1 3 GX S S PMOS W= 842000u L= 0.25u 
M2 S GX S D NMOS W= 842000u L= 5.109e-07 
R1 D 3 2.960e-02 TC=6.538e-04 1.262e-06 
CGS GX S 1.000e-13 
CGD GX D 2.192e-11 
RG G GY 4 
RTCV 100 S 1e6 TC=-0.185e-05 -0.197e-06
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 842000u 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.3e-8 
+ RS = 0 KP = 7.914e-06 NSUB = 1.900e+12 
+ KAPPA = 1.0744e-06 NFS = 1.000e+12 
+ LD = 0 IS = 0 TPG = -1 ) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.3e-8 
+NSUB = 3.969e+17 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 5.476e-08 T_MEASURED = 25 BV = 8.2 
+RS = 1.797e-02 N = 1.623e+00 IS = 1.000e-06 
+EG = 9.798e-01 XTI = -5.429e+00 TRS1 = 1.000e-05 
+CJO = 2.000e-11 VJ = 3.000e-01 M = 1.000e+00 ) 
.ENDS Si1489EDH_mos
.subckt Si1489EDH_esd 2 1
r1 1 9 1.254e+06 TC= -4.326e-03 
d1 9 2 dleak 
.MODEL dleak d (IS = 1.9357e-09 XTI = 4.600e+02 EG = 1.17 
+ T_measured = 25 TBV1 = 0 N = 3.813e+01 BV = 50)
r2 1 10 1.5e+02 TC= -1.927e-03 
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 5.0229e-13 XTI = -7.960e+01 EG = 1.17 
+ T_measured = 25 TBV1 = 1.930e-02 N = 3.328e+00 BV = 7.032e+00 )
.ends Si1489EDH_esd