*Dec 19, 2011
*Doc. ID: 63668, ECN S11-2431, Rev. A
*File Name: Si5999EDU_PS.txt and Si5999EDU_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet.  Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si5999EDU D G S 
x1  D G S Si5999EDU_mos
x2  G S   Si5999EDU_esd
.ENDS  Si5999EDU
.SUBCKT Si5999EDU_mos D G S 
M1 3 GX S S PMOS W= 1080000u L= 0.25u 
M2 S GX S D NMOS W= 1080000u L= 3.818e-07 
R1 D 3 1.725e-02 TC=4.934e-03 4.452e-06 
CGS GX S 9.665e-11 
CGD GX D 3.799e-11 
RG G GY 8 
RTCV 100 S 1e6 TC=1.132e-04 -2.616e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 
+ RS = 9.944e-03 KP = 3.700e-06 NSUB = 4.730e+15 
+ KAPPA = 4.348e-04 ETA = 2.397e-05 NFS = 2.346e+11 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 
+NSUB = 4.986e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-08 T_MEASURED = 25 BV = 21 
+RS = 1.560e-02 N = 1.719e+00 IS = 9.905e-08 
+EG = 9.655e-01 XTI = 4.662e+00 TRS1 = 1.000e-05 
+CJO = 1.220e-10 VJ = 3.000e-01 M = 2.053e-01 ) 
.ENDS  Si5999EDU_mos
.subckt Si5999EDU_esd 2 1 
r1 1 9 9.422e+06 TC= -7.063e-03 
d1 9 2 dleak 1 
.MODEL dleak d (IS = 4.652e-10 XTI = 5.768e+02 EG = 1.17 
+ T_MEASURED=25 TBV1 = 0 N = 4.541e+01 BV = 50) 
r2 1 10 2.712e+02 TC= -4.115e-03 
d3 11 10 dout  0.514 
d4 11 12 dout  0.514 
d5 13 12 dout  0.575 
d6 13 2   dout  0.575 
.MODEL dout D (IS = 1.763e-10 XTI = 1.433e+01 EG = 1.17 
+ T_MEASURED = 25 TBV1 = -3.285e-03 N = 2.898e+00 BV = 6.560e+00 ) 
.ends Si5999EDU_esd